advanced power n-channel enhancement mode electronics corp. power mosfet 100% avalanche test bv dss 800v fast switching characteristic r ds(on) 4.5 simple drive requirement i d 3.2a rohs compliant description absolute maximum ratings symbol units v ds drain-source voltage v v gs gate-source voltage v i d @t c =25 continuous drain current, v gs @ 10v a i d @t c =100 continuous drain current, v gs @ 10v a i dm pulsed drain current 1 a p d @t c =25 total power dissipation w e as single pulse avalanche energy 3 mj t stg storage temperature range t j operating junction temperature range thermal data symbol parameter value units rthj-c maximum thermal resistance, junction-case 3.6 /w rthj-a maximum thermal resistance, junction-ambient 6 5 /w data & specifications subject to change without not ice 4.5 + 30 3.2 34.7 parameter rating 800 12 1.7 AP04N80I-HF halogen-free product 201108182 1 -55 to 150 -55 to 150 g d s g d s to-220cfm(i) ap04n80 series are specially designed as main switching devices for universal 90~265vac off-line ac/dc converter applications. to-220cfm type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching, ruggedized design and cost- effectiveness. http://www..net/ datasheet pdf - http://www..net/
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 800 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =1a - - 4.5 v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 4 v g fs forward transconductance v ds =10v, i d =1a - 2 - s i dss drain-source leakage current v ds =640v, v gs =0v - - 100 ua i gss gate-source leakage v gs =+ 30v, v ds =0v - - + 100 na q g total gate charge i d =1a - 18 - nc q gs gate-source charge v ds =480v - 3.8 - nc q gd gate-drain ("miller") charge v gs =10v - 6 - nc t d(on) turn-on delay time v dd =300v - 15 - ns t r rise time i d =1a - 20 - ns t d(off) turn-off delay time r g =50 - 105 - ns t f fall time v gs =10v - 30 - ns c iss input capacitance v gs =0v - 800 1280 pf c oss output capacitance v ds =25v - 55 - pf c rss reverse transfer capacitance f=1.0mhz - 4 - pf r g gate resistance f=1.0mhz - 3.6 7.2 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =1.2a, v gs =0v - - 1.5 v t rr reverse recovery time i s =1a, v gs =0v - 320 - ns q rr reverse recovery charge di/dt=100a/s - 1.3 - c notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.starting t j =25 o c , v dd =50v , l=1mh , r g =25 , i as =3a this product is sensitive to electrostatic discharg e, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized . apec does not assume any liability arising out of t he application or use of any product or circuit des cribed herein; neither does it convey any license under it s patent rights, nor the rights of others. apec reserves the right to make changes without fur ther notice to any products herein to improve reliability, function or design. AP04N80I-HF 2 http://www..net/ datasheet pdf - http://www..net/
AP04N80I-HF fig 1. typical output characteristic s fig 2. typical output characteristic s fig 3. normalized bv dss v.s. junction fig 4. normalized on-r esistance temperature v.s. junction tempe rature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0.8 0.9 1 1.1 1.2 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss (v) 0 1 2 3 4 0 8 16 24 32 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 9.0v 8.0v 7.0v v g =6.0v 0 0 1 1 2 2 0 8 16 24 32 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 10v 9.0v 8.0v 7.0v v g =6.0v 0 1 2 3 -50 0 50 100 150 t j , junction temperature ( o c ) normalized r ds(on) i d =1a v g =10v 0 1 2 3 4 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j = 25 o c t j = 150 o c 0.4 0.6 0.8 1 1.2 1.4 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) (v) i d =1ma i d =1ma http://www..net/ datasheet pdf - http://www..net/
AP04N80I-HF fig 7. gate charge characteristics fig 8. typical capacitance characteristi cs fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12 . gate charge waveform 4 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0 2 4 6 8 10 12 0 4 8 12 16 20 24 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =1a v ds =480v 0 200 400 600 800 1000 1200 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 10v q gs q gd q g charge 0.01 0.1 1 10 100 1 10 100 1000 10000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms 1s dc operation in this area limited by r ds(on) http://www..net/ datasheet pdf - http://www..net/
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